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PD - 94569
GB25XF120K
IGBT 6PACK MODULE
Features
* Low VCE (on) Non Punch Through IGBT Technology * Low Diode VF * 10s Short Circuit Capability * Square RBSOA * HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics * Positive VCE (on) Temperature Coefficient * Ceramic DBC Substrate * Low Stray Inductance Design
VCES = 1200V IC = 25A, TC=80C tsc > 10s, TJ=150C
ECONO2 6PACK
VCE(on) typ. = 2.35V
Benefits
* Benchmark Efficiency for Motor Control * Rugged Transient Performance * Low EMI, Requires Less Snubbing * Direct Mounting to Heatsink * PCB Solderable Terminals * Low Junction to Case Thermal Resistance * UL Listed
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 80C ICM ILM IF @ TC = 25C IF @ TC = 80C IFM VGE PD @ TC = 25C PD @ TC = 80C TJ TSTG VISOL Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Maximum Operating Junction Temperature Storage Temperature Range Isolation Voltage
Max.
1200 40 25 80 80 40 25 80 20 198 111 150 -40 to +125 AC 2500 (1min)
Units
V A
V W C V
Thermal and Mechanical Characteristics
Parameter
RJC (IGBT) RJC (Diode) RCS (Module) Junction-to-Case- IGBT Junction-to-Case- Diode Case-to-Sink, flat, greased surface Mounting Torque (M5) Weight
Min.
--- --- --- 2.7 ---
Typ.
--- --- 0.05 --- 170
Max.
0.63 1.00 --- 3.3 ---
Units
C/W
Nm g
.
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10/18/02
GB25XF120K
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
BVCES VCE(on)
Collector-to-Emitter Breakdown Voltage
Min.
1200 -- -- -- --
Typ. Max. Units
-- 0.84 2.35 2.80 2.75 3.40 5.0 -12 5 500 1.90 2.15 2.00 2.35 -- -- -- 2.50 3.00 -- -- 6.0 -- 40 -- 2.40 2.75 -- -- 200 nA V
Conditions
Ref.Fig
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage --
Collector-to-Emitter Voltage
V VGE = 0V, IC = 500A V/C VGE = 0V, IC = 1mA (25C-125C) IC = 25A, VGE = 15V V IC = 40A, VGE = 15V IC = 25A, VGE = 15V, TJ = 125C IC = 40A, VGE = 15V, TJ = 125C VCE = VGE, IC = 250A mV/C VCE = VGE, IC = 1mA (25C-125C) A VGE = 0V, VCE = 1200V VGE = 0V, VCE = 1200V, TJ = 125C IF = 25A IF = 40A IF = 25A, TJ = 125C IF = 40A, TJ = 125C VGE = 20V
1,2 3,4
VGE(th) VGE(th) ICES
Gate Threshold Voltage Threshold Voltage temp. coefficient Zero Gate Voltage Collector Current
4.0 -- -- -- --
3,4
VFM
Diode Forward Voltage Drop
-- -- --
16
IGES
Gate-to-Emitter Leakage Current
--
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Qg Qge Qgc Eon Eoff Etot Eon Eoff Etot td(on) tr td(off) tf Cies Coes Cres RBSOA Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area
Min.
-- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
Typ. Max. Units
180 20 90 2220 1850 4070 3150 2720 5870 60 30 450 200 2370 455 60 272 33 137 4260 3100 7360 5120 4260 9380 80 45 850 320 -- -- -- pF VGE = 0V VCC = 30V ns J J nC IC = 25A VCC = 600V VGE = 15V
Conditions
Ref.Fig
10 CT1
IC = 25A, VCC = 600V VGE = 15V, RG = 10, L = 400H TJ = 25C
CT4
d
IC = 25A, VCC = 600V VGE = 15V, RG = 10, L = 400H TJ = 125C
5,7 CT4 WF1,2 6,8 CT4 WF1 WF2
d
IC = 25A, VCC = 600V VGE = 15V, RG = 10, L = 400H TJ = 125C
9
FULL SQUARE
f = 1Mhz TJ = 150C, IC = 80A RG = 10, VGE = +15V to 0V TJ = 150C
CT2 14 CT3
SCSOA Irr
Short Circuit Safe Operating Area Peak Reverse Recovery Current
10 --
-- 55
-- --
s A
VCC = 900V, VP = 1200V RG = 10, VGE = +15V to 0V TJ = 125C VCC = 600V, IF = 25A, L = 400H VGE = 15V, RG = 10
17,18,19
CT4
For UL Applications, TJ is limited to +125C (See File E78996). Energy losses include "tail" and diode reverse recovery.
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GB25XF120K
50 45 40 35
ICE (A)
50
VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
45 40 35
ICE (A)
30 25 20 15 10 5 0 0
30 25 20 15 10 5 0
VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
1
2
3 VCE (V)
4
5
6
0
1
2
3 VCE (V)
4
5
6
Fig. 1 - Typ. IGBT Output Characteristics TJ = 25C; tp = 80s
Fig. 2 - Typ. IGBT Output Characteristics TJ = 125C; tp = 80s
20 18 16 14
VCE (V)
VCE (V)
20 18 16 14
12 10 8 6 4 2 0 5 10 VGE (V)
ICE = 12.5A ICE = 25A ICE = 50A
12 10 8 6 4 2 0
ICE = 12.5A ICE = 25A ICE = 50A
15
20
5
10 VGE (V)
15
20
Fig. 3 - Typical VCE vs. VGE TJ = 25C
Fig. 4 - Typical VCE vs. VGE TJ = 125C
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GB25XF120K
7000 6000 EON 5000
Energy (J)
1000
tdOFF tF
4000 3000 2000 1000 0 0 20 IC (A)
EOFF
Swiching Time (ns)
100
tdON
tR
40 60
10 0 20 40 60
IC (A)
Fig. 5 - Typ. Energy Loss vs. IC TJ = 125C; L=400H; VCE= 600V RG= 10; VGE= 15V
Fig. 6 - Typ. Switching Time vs. IC TJ = 125C; L=400H; VCE= 600V RG= 10; VGE= 15V
5000 4500 4000 3500
10000
EON
Swiching Time (ns)
1000
Energy (J)
3000 2500 2000 1500 1000 500 0 0 10 20 30 40 50
tdOFF tF
EOFF
100
tdON
tR
10 0 10 20 30 40 50
RG ()
RG ()
Fig. 7 - Typ. Energy Loss vs. RG TJ = 125C; L=400H; VCE= 600V ICE= 25A; VGE= 15V
Fig. 8 - Typ. Switching Time vs. RG TJ = 125C; L=400H; VCE= 600V ICE= 25A; VGE= 15V
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GB25XF120K
10000
16
Cies
14 12 400V 600V
Capacitance (pF)
1000
10
Coes
VGE (V)
8 6
100
Cres
4 2
10 0 20 40 60 80 100
0 0 50 100 150 200 Q G , Total Gate Charge (nC)
VCE (V)
Fig. 9- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
Fig. 10 - Typical Gate Charge vs. VGE ICE = 25A; L = 600H
60
250
200
40
Ptot (W)
IC (A)
150
100
20
50
0 0 20 40 60 80 100 120 140 160 T C (C)
0 0 50 100 T C (C) 150 200
Fig. 11 - Maximum DC Collector Current vs. Case Temperature
Fig. 12 - Power Dissipation vs. Case Temperature
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GB25XF120K
1000
100
100 20 s
IC (A)
10 100 s
IC (A)
10
1
1 ms 10 ms DC
0.1 1 10 100 VCE (V) 1000 10000
1 10 100 1000 10000
VCE (V)
Fig. 13 - Forward SOA TC = 25C; TJ 150C
Fig. 14 - Reverse Bias SOA TJ = 150C; VGE =15V
350 300 250
ICE (A)
IF (A)
50
TJ = 25C TJ = 125C
45 40 35 30 25 20 15 10
25C 125C
200 150 100 50 0 0 5 10 VGE (V) 15 20
5 0 0.0 1.0 2.0 VF (V) 3.0 4.0
Fig. 15 - Typ. Transfer Characteristics VCE = 50V; tp = 10s
Fig. 16 - Typ. Diode Forward Characteristics tp = 80s
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GB25XF120K
80 70 60 70
RG = 4.7
60
RG = 10
50
50
IRR (A)
40 30 20 10 0 0 10 20 30
RG = 22
IRR (A)
60
40 30 20 10 0
40
50
0
5
10
15
20
25
IF (A)
RG ()
Fig. 17 - Typical Diode IRR vs. IF TJ = 125C
Fig. 18 - Typical Diode IRR vs. RG TJ = 125C; IF = 25A
70 60 50
IRR (A)
40 30 20 10 0 500 1000 1500 2000
diF /dt (A/s)
Fig. 19- Typical Diode IRR vs. diF/dt VCC= 600V; VGE= 15V; ICE= 25A; TJ = 125C
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GB25XF120K
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20 0.10 0.05 0.01 0.02
J R1 R1 J 1 2 R2 R2 R3 R3 3 C 3
0.01
Ri (C/W) 0.117 0.397 0.116
i (sec) 0.000572 0.025837 0.060132
1
2
0.001
Ci= i/Ri Ci i/Ri
SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.0001 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0
t1 , Rectangular Pulse Duration (sec)
Fig 20. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
Thermal Response ( Z thJC )
1
D = 0.50 0.20 0.10 0.05 0.01 0.02 SINGLE PULSE ( THERMAL RESPONSE )
0.001 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0
0.1
J
R1 R1 J 1 2
R2 R2
R3 R3 3 C 3
Ri (C/W) i (sec) 0.235 0.00549 0.527 0.238 0.02117 0.049021
1
2
0.01
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
t1 , Rectangular Pulse Duration (sec)
Fig 21. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
8
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GB25XF120K
900 800 tf 700 600 500 VCE (V) 400 300
5% V CE 90% ICE
45 40 35 30 25 VCE (V) ICE (A) 20 15 10
5% ICE
900 800 700 600
TEST CURRENT tr
90 80 70 60 50
90% test current
500 400 300 200 100 0 -100 9.40
Eon Loss 10% test current 5% V CE
40 30 20 10 0
200 100 0
Eof f Loss
5 0 -5 -0.10 0.40 0.90 1.40 Time(s)
-100 -0.60
9.60
9.80
-10 10.00 10.20 10.40
Time (s)
Fig. WF1- Typ. Turn-off Loss Waveform @ TJ = 125C using Fig. CT.4
Fig. WF2- Typ. Turn-on Loss Waveform @ TJ = 125C using Fig. CT.4
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ICE (A)
9
GB25XF120K
L
L DUT
0
VCC
80 V Rg
DUT
1000V
1K
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
Driver
D C
diode clamp / DUT
L
900V
- 5V DUT / DRIVER
Rg
VCC
DUT
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
R=
VCC ICM
DUT
Rg
VCC
Fig.C.T.5 - Resistive Load Circuit
10
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GB25XF120K
Econo2 6Pack Package Outline
Dimensions are shown in millimeters (inches)
0.25 [.0098] CONVEX
Econo2 6Pack Part Marking Information
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/02
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